HMC637BPM5E

HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. This device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. This amplifier operates from dc to 7.5GHz, providing 15.5dB of small signal gain, 28dBm output power at 1dB gain compression, a typical output IP3 of 39dBm, and a 3.5dB noise figure, while requiring 345mA from a 12V supply voltage (VDD). Gain flatness is excellent from dc to 7.5GHz at ±0.5dB typical, making the device ideal for military, space, and test equipment applications. It is widely used in applications such as military and space, test instrumentation etc.

• Self biased at VDD = 12V at 345mA typical
• Optional bias control on VGG1 for IDQ adjustment
• Optional bias control on VGG2 for IP2 and IP3 optimization
• 50 ohm matched input/output
• Noise figure is 3.5dB typical at (TA = 25°C, VDD = 12V)
• Gain flatness is ±0.5dB typical at (TA = 25°C, VDD = 12V)
• Gain variation over temperature ±0.015 dB/°C typical at (TA = 25°C, VDD = 12V)
• Operating temperature range from -55°C to +85°C
• Package style is 32-lead lead frame chip scale, premolded cavity [LFCSP-CAV]

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