STD3NK60Z-1
Power MOSFET, N Channel, 600 V, 2.4 A, 3.3 ohm, TO-251AA, Through Hole
Behöver du fler?
| Antal | |
|---|---|
| 1+ | 16,500 kr |
| 10+ | 6,610 kr |
| 100+ | 5,780 kr |
| 500+ | 5,140 kr |
| 1000+ | 4,410 kr |
| 5000+ | 4,080 kr |
Produktinformation
Produktöversikt
The STD3NK60Z-1 is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
- Extremely high dV/dt capability
- 100% Avalanche tested
- Very low intrinsic capacitance
- Very good manufacturing repeatability
- Ideal for off-line power supplies, adaptors and PFC
Tillämpningar
Industrial, Power Management, Lighting
Varningar
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts
Tekniska specifikationer
N Channel
2.4A
TO-251AA
10V
45W
150°C
-
No SVHC (21-Jan-2025)
600V
3.3ohm
Through Hole
3.75V
3Pins
-
-
Teknisk dokumentation (2)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:China
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad