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| Antal | |
|---|---|
| 2500+ | 9,660 kr |
| 7500+ | 8,620 kr |
Produktinformation
Produktöversikt
The FDS5670 is a N-channel MOSFET produced using PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
Varningar
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniska specifikationer
N Channel
10A
SOIC
10V
2.5W
150°C
-
No SVHC (27-Jun-2024)
60V
0.014ohm
Surface Mount
2.4V
8Pins
-
MSL 1 - Unlimited
Teknisk dokumentation (2)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:China
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad