FDA59N30
Power MOSFET, N Channel, 300 V, 59 A, 0.056 ohm, TO-3P, Through Hole
450 Nu kan du reservera lagervaror
| Antal | |
|---|---|
| 1+ | 55,840 kr |
| 10+ | 24,740 kr |
| 100+ | 23,960 kr |
| 500+ | 23,180 kr |
| 1000+ | 22,180 kr |
Produktinformation
Produktöversikt
The FDA59N30 is a 300V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode's reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET's body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% Avalanche tested
Tillämpningar
Power Management, Lighting
Tekniska specifikationer
N Channel
59A
TO-3P
10V
500W
150°C
-
Lead (27-Jun-2024)
300V
0.056ohm
Through Hole
5V
3Pins
-
-
Teknisk dokumentation (2)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:China
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad