HMC414MS8GETR

HMC414MS8GETR is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier that operates between 2.2 and 2.8GHz. This amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, this amplifier provides 20dB of gain, +30dBm of saturated power at 32% PAE from a +5V supply voltage. This amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. Applications include Bluetooth, MMDS.

• Power down capability, low external part count
• Supply voltage range from +2.75V to +5V, frequency range from 2.2 to 2.8GHz at Vs = 3.6V
• Gain is 20dB typical at TA = +25°C, Vs = 3.6V
• Gain variation over temperature is 0.03dB/°C typical at TA = +25°C, Vs = 3.6V
• Input return loss is 8dB typical at TA = +25°C, Vs = 3.6V
• Output return loss is 9dB typical at TA = +25°C, Vs = 3.6V
• Output power for 1dB compression is 25dBm typical at (TA = +25°C, Vs = 3.6V)
• Output third order intercept is 35dBm typical at (TA = +25°C, Vs = 3.6V)
• Switching speed is 45ns typical at TA = +25°C, Vs = 3.6V
• Operating temperature range from -40 to +85°C

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