Behöver du fler?
Antal | |
---|---|
1+ | 188,640 kr |
10+ | 150,000 kr |
25+ | 140,400 kr |
50+ | 140,180 kr |
100+ | 129,930 kr |
Produktinformation
Produktöversikt
The LF356H/NOPB is a first monolithic JFET input Operational Amplifier to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). This amplifier features low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 amplifier is also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.
- Replace expensive hybrid and module FET op-amps
- Rugged JFETs allow blow-out free handling compared with MOSFET input devices
- Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
- New output stage allows use of large capacitive loads (5000pF) without stability problems
- Internal compensation and large differential input voltage capability
- Military rated
- Green product and no Sb/Br
Tillämpningar
Industrial
Varningar
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Kommentarer
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
Tekniska specifikationer
1Channels
12V/µs
TO-99
FET / JFET Input
3mV
Through Hole
70°C
-
No SVHC (27-Jun-2018)
-
1 Amplifier
5MHz
10V to 36V
8Pins
-
30pA
0°C
-
MSL 1 - Unlimited
TO-99
5MHz
12V/µs
Teknisk dokumentation (1)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:Philippines
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad