STPSC20H12DY
Silicon Carbide Schottky Diode, Single, 1.2 kV, 38 A, 129 nC, TO-220AC
Behöver du fler?
| Antal | |
|---|---|
| 1+ | 113,030 kr |
| 5+ | 90,400 kr |
| 10+ | 67,670 kr |
| 50+ | 62,200 kr |
| 100+ | 58,590 kr |
| 250+ | 57,390 kr |
Produktinformation
Produktöversikt
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Varningar
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniska specifikationer
-
1.2kV
129nC
2 Pin
Through Hole
No SVHC (12-Jan-2017)
Single
38A
TO-220AC
175°C
AEC-Q101
Teknisk dokumentation (3)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:China
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad