R-REF01-HB

R-REF01-HB is a half-bridge gate-drive power supply reference design (RD). It consists of a half-bridge suitable for voltages up to 1KV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no maximum duty cycle limitations. Two R12P22005D, R12P21503D, R12P21509D and R12P06S DC/DC modules each are included in the R-REF01-HB design kit.

• Optimized for very high switching speed
• 2.5KV continuous input to output isolation
• High gate-drive currents (up to 10A source and sink)
• TTL-compatible signal input
• Single 15V to 42V supply
• Shoot-through protection
• Separate input for low and high-side switch for use with different topologies
• Qualified with 65KV/µs at Vcommon mode =1KV
• ESD sensitive