4 000 Nu kan du reservera lagervaror
Antal | |
---|---|
1+ | 16,740 kr |
10+ | 11,010 kr |
100+ | 7,330 kr |
500+ | 6,520 kr |
1000+ | 5,970 kr |
5000+ | 5,020 kr |
Produktinformation
Produktöversikt
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Tillämpningar
Industrial, Power Management
Tekniska specifikationer
P Channel
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Teknisk dokumentation (4)
Tillhörande produkter
1 produkt hittades
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:Philippines
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad