1 000 Nu kan du reservera lagervaror
Antal | |
---|---|
100+ | 22,340 kr |
250+ | 21,150 kr |
500+ | 20,500 kr |
1000+ | 18,350 kr |
Produktinformation
Produktöversikt
IR2130STRPBF is a high voltage, high-speed power MOSFET and IGBT bridge driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construction. Logic input is compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analogue feedback of bridge current via an external current sense resistor. A current trip function that terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delay is matched to simplify use at high frequencies. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the high-side configuration which operate up to 600V.
- Floating channel designed for bootstrap operation, fully operational to +600V
- Tolerant to negative transient voltage dV/dt immune, undervoltage lockout for both channels
- Cross-conduction prevention logic, deadtime is 2.5µs typ (TA=25°C)
- Over-current shutdown turns off all six drivers, independent half-bridge drivers
- Matched propagation delay for all channels, 2.5V logic compatible, outputs out of phase with inputs
- Output high short circuit pulsed current is 200mA min (VO=0V, VIN=0V, PW ≤ 10µs)
- Output low short circuit pulsed current is 420mA min (VO=15V, VIN=5V, PW ≤ 10µs)
- 675ns turn-on propagation delay typ (VBIAS (VCC, VBS1,2,3)=15V, VS0,1,2,3=VSS, CL=1000pF, TA=25°C)
- Turn-off propagation delay is 425ns typ (CL=1000pF, TA=25°C)
- 28 lead SOIC package, ambient temperature range from -40 to 125°C
Tekniska specifikationer
6Channels
3 Phase Bridge
28Pins
Surface Mount
250mA
10V
-40°C
675ns
-
MSL 3 - 168 hours
-
IGBT, MOSFET
WSOIC
Inverting
500mA
20V
125°C
425ns
-
No SVHC (21-Jan-2025)
Teknisk dokumentation (1)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:Malaysia
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
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