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Antal | |
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1+ | 42,090 kr |
10+ | 32,480 kr |
25+ | 29,030 kr |
50+ | 28,170 kr |
100+ | 27,300 kr |
250+ | 26,870 kr |
500+ | 26,760 kr |
1000+ | 26,660 kr |
Produktinformation
Produktöversikt
The IR2113SPBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Tillämpningar
Industrial, Consumer Electronics, Alternative Energy, Power Management
Tekniska specifikationer
2Channels
High Side and Low Side
16Pins
Surface Mount
2A
10V
-40°C
120ns
-
-
-
IGBT, MOSFET
SOIC
Non-Inverting
2A
20V
125°C
94ns
-
No SVHC (21-Jan-2025)
Teknisk dokumentation (3)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:Malaysia
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad