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3000+ | 16,940 kr |
Produktinformation
Produktöversikt
The IR2101PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
- DV/DT Immune
- Under-voltage lockout
- Matched propagation delay for both channels
- Outputs in phase with inputs
Tillämpningar
Industrial, Consumer Electronics, Alternative Energy, Power Management
Varningar
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniska specifikationer
2Channels
High Side and Low Side
8Pins
Through Hole
210mA
10V
-40°C
160ns
-
-
-
IGBT, MOSFET
DIP
Non-Inverting
360mA
20V
125°C
150ns
-
No SVHC (21-Jan-2025)
Teknisk dokumentation (4)
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Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:Malaysia
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad