FM24V10-G

FM24V10-G is a 1-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories. The FM24V10 is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24V10 ideal for non-volatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• High-endurance 100 trillion (10^14) read/writes, 151-year data retention
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast 2-wire serial interface (I2C), direct hardware replacement for serial (I2C) EEPROM
• Up to 3.4MHz frequency, supports legacy timings for 100KHz and 400KHz
• Power supply range from 2 to 3.6V
• Standby current is 150µA max at SCL=SDA=VDD
• Output leakage current is +1µA maximum at VSS ≤ VIN ≤ VDD
• 8-pin SOIC package
• Industrial temperature range from -40°C to +85°C