LTC7891RUFDM#PBF

LTC7891RUFDM#PBF is a 100V, low IQ, synchronous step-down controller for GaN FETs. It is a high-performance, step-down, DC-to-DC switching regulator controller that drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from input voltages up to 100V. The LTC7891 solves many of the challenges traditionally faced when using GaN FETs. It simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide semiconductor field-effect transistor (MOSFET) solution. The internal smart bootstrap switch prevents overcharging of the BOOST pin to SW pin high-side driver supplies during dead times, protecting the gate of the top GaN FET. Applications include industrial power systems, military avionics, medical systems, and telecommunications power systems.

• GaN drive technology fully optimized for GaN FETs, no catch, clamp, or bootstrap diodes needed
• Input supply operating range from 4 to 100V (TJ=-40°C to +150°C)
• Wide output voltage range from 0.8V ≤ VOUT ≤ 60V
• Internal smart bootstrap switches prevent overcharging of high side driver supplies
• Internally optimized, smart near zero dead times or resistor adjustable dead times
• Split output gate drivers for adjustable turn on and turn off driver strengths
• Accurate adjustable driver voltage and UVLO, spread spectrum frequency modulation
• Total input supply current in regulation is 5μA typ (48V to 5V, no load, TA=25°C)
• Synchronizable frequency range from 0.1 to 3MHz (PLLIN/SPREAD=external clock)
• 28 lead QFN package, operating junction temperature range from -40°C to 150°C

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