HMC902LP3E

HMC902LP3E is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA), which is self biased with optional bias control for IDQ reduction. This also features inputs/outputs that are dc blocked and internally matched to 50 ohm, making it ideal for high capacity microwave radios and C band, very small aperture terminal (VSAT) applications. Typical applications are point to point radios, point to multi point radios, military and space, test instrumentation.

• Self biased with optional bias control for quiescent drain control (IDQ) reduction
• Frequency range from 5 to 11GHz (TA=25°C, VDD1=VDD2=3.5V, IDQ=80mA)
• Gain variation over temperature is 0.01dB/°C typ (TA=25°C, VDD1=VDD2=3.5V, IDQ=80mA)
• Gain is 19.5dB typ (TA=25°C, VDD1=VDD2=3.5V, IDQ=80mA)
• Saturated output power is 17.5dBm typ (TA=25°C, VDD1=VDD2=3.5V, IDQ=80mA)
• Supply current is 80mA typ (VDD=3.5V, set VGG2=0V, VGG1=0V typ, TA=25°C, VDD1=VDD2=3.5V, IDQ=80mA)
• 16-lead frame chip scale package
• Temperature rating range from -40°C to +85°C

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