HMC8412LP2FETR

HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier. It also features inputs and outputs that are internally matched to 50 ohm, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. Typical applications are test instrumentation, telecommunications, military radar and communication, electronic warfare, aerospace.

• Single positive supply (self biased)
• Frequency range from 0.4 to 3GHz (VDD=5V, supply current (IDQ)=60mA, RBIAS=1.47Kohm and TA=25°C)
• Gain is 15.5dB typ (VDD=5V, supply current (IDQ)=60mA, RBIAS=1.47Kohm and TA=25°C)
• Gain variation over temperature is 0.010dB/°C typ (VDD=5V, supply current (IDQ)=60mA, TA=25°C)
• Power added efficiency (PAE) is 28% typ (measured at PSAT)
• Supply current IDQ is 60mA typ (VDD=5V, supply current (IDQ)=60mA, RBIAS=1.47Kohm and TA=25°C)
• 6-lead LFCSP package
• Temperature rating range from -40°C to +85°C

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