HMC606LC5TR

HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package. With an input signal of 12GHz, the amplifier provides ultralow phase noise performance of -160dBc/Hz at a 10KHz offset, representing a significant improvement over field effect transistor (FET)- based distributed amplifiers. The input and output of the HMC606LC5 amplifier is internally matched to 50 ohm and are internally dc blocked. Application includes radars, electronic warfare (EW), and electronic countermeasures (ECMs), microwave radios, test instrumentation, military and space, fibre optic systems.

• Frequency range from 2 to 12GHz (TA=25°C, VCC1=VCC2=5V)
• Typical gain is 13.5dB (TA=25°C, VCC1=VCC2=5V)
• Typical noise figure is 5dB (TA=25°C, VCC1=VCC2=5V)
• Typical input return loss is 20dB (TA=25°C, VCC1=VCC2=5V)
• Typical return loss is 15dB (TA=25°C, VCC1=VCC2=5V)
• Typical power for 1dB compression (P1dB) is 15dBm (TA=25°C, VCC1=VCC2=5V)
• Typical supply current is 64mA (TA=25°C, VCC1=VCC2=5V)
• Typical phase noise is -140dBc/Hz (at 100Hz, TA=25°C, VCC1=VCC2=5V)
• 32-terminal ceramic leadless chip carrier [LCC] package
• Temperature range from -40°C to +85°C

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