HMC510LP5ETR

HMC510LP5E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO. This device integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +13dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. It is used in application such as point to point/multipoint radio, test equipment & industrial controls, SATCOM, military end-use etc.

• Dual output is Fo = 8.45GHz - 9.55GHz, Fo/2 = 4.225GHz - 4.775GHz
• Phase noise is -116dBc/Hz typ at (100KHz offset, Vtune= +5V at RFOUT)
• No external resonator needed
• Tune voltage range is 2V to 13V
• Supply current is 315mA typ at (TA = +25°C)
• Output return loss is 2dB typ at ( TA = +25°C)
• Frequency drift rate is 0.8MHz/°C typ at (TA = +25°C)
• Pushing at (Vtune= 5V) is 20 MHz/V typ
• Operating temperature is -40°C to +85°C
• Package style is 32-lead QFN

Kommentarer

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