ADL8102ACPZN

ADL8102ACPZN is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 1GHz to 22GHz. It provides a typical gain of 27dB at 9GHz to 19GHz, a 2.5dB typical noise figure from 9GHz to 19GHz, a typical output third-order intercept (OIP3) of 25dBm at 1GHz to 9GHz, and a saturated output power (PSAT) of upto 15.5dBm, which requires only 110mA from a 5V supply voltage. It also features inputs and outputs that are internally matched to 50 ohm. The RFIN and RFOUT pins are internally AC-coupled, and the bias inductor is also integrated, which makes it ideal for surface-mounted technology (SMT)-based high-capacity microwave radio applications. It is also used in applications such as telecommunications, satellite communications, military radar, weather radar, civil radar, and electronic warfare.

• Single positive supply (self biased)
• Gain variation over temperature is 0.053dB/°C typical at (TCASE = 25°C)
• Noise figure is 3dB typical at (1GHz to 9GHz, TCASE = 25°C)
• Input return loss is 15dB typical at (1GHz to 9GHz, TCASE = 25°C)
• Output return loss is 18dB typical at (1GHz to 9GHz, TCASE = 25°C)
• 6.5% typical power added efficiency at (1GHz to 9GHz, TCASE = 25°C)
• Supply current (IDQ) is 110mA typical
• Saturated output power is 15.5dBm typical at (1GHz to 9GHz, TCASE = 25°C)
• Second-order intercept (OIP2) is 32dBm typical at (1GHz to 9GHz, TCASE = 25°C)
• Operating temperature range from -40°C to +85°C, 16-lead LFCSP package

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