Print Page
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD50N06-09L-E3
Order Code1470150
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0093ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for SUD50N06-09L-E3
5 Products Found
Product Overview
The SUD50N06-09L-E3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- -55 to 175°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0093ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003
Product traceability