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SH8M24GZETB
Dual MOSFET, Complementary N and P Channel, 45 V, 45 V, 6 A, 6 A, 0.033 ohm
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Product Information
ManufacturerROHM
Manufacturer Part NoSH8M24GZETB
Order Code2706708
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel45V
Drain Source Voltage Vds P Channel45V
Continuous Drain Current Id N Channel6A
Continuous Drain Current Id P Channel6A
Drain Source On State Resistance N Channel0.033ohm
Drain Source On State Resistance P Channel0.033ohm
Transistor Case StyleSOP
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
45V
Continuous Drain Current Id P Channel
6A
Drain Source On State Resistance P Channel
0.033ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
45V
Continuous Drain Current Id N Channel
6A
Drain Source On State Resistance N Channel
0.033ohm
Transistor Case Style
SOP
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:South Korea
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074
Product traceability