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TP65H100G4LSGB-TR
Gallium Nitride (GaN) Transistor, 650 V, 18.9 A, 0.11 ohm, 14.4 nC, PQFN, Surface Mount
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3,000 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | kr35.400 |
| 500+ | kr31.300 |
| 1000+ | kr27.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 150
Multiple: 1
kr5,310.00 (ex VAT)
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Product Information
ManufacturerRENESAS
Manufacturer Part NoTP65H100G4LSGB-TR
Order Code4680951RL
Technical Datasheet
Drain Source Voltage Vds650V
Continuous Drain Current Id18.9A
Drain Source On State Resistance0.11ohm
Typical Gate Charge14.4nC
No. of Pins8Pins
Technical Specifications
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.11ohm
No. of Pins
8Pins
Continuous Drain Current Id
18.9A
Typical Gate Charge
14.4nC
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001
Product traceability