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IXFN26N90
MOSFET Transistor, N Channel, 26 A, 900 V, 0.3 ohm, 10 V, 5 V
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFN26N90
Order Code4905570
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id26A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.3ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation600W
Operating Temperature Max150°C
Product Range-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
900V
Rds(on) Test Voltage
10V
Power Dissipation
600W
Product Range
-
Continuous Drain Current Id
26A
Drain Source On State Resistance
0.3ohm
Gate Source Threshold Voltage Max
5V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.044