LM324N/NOPB

The LM324N/NOPB is a four independent, high-gain, internally frequency compensated Operational Amplifier designed to operate from a single power supply over a wide range of voltages. Operation from split-power supplies is also possible and the low-power supply current drain is independent of the magnitude of the power supply voltage. Application areas include transducer amplifiers, DC gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems. For example, the LM124-N series can directly operate off of the standard 5V power supply voltage which is used in digital systems and easily provides the required interface electronics without requiring the additional ±15V power supplies.

• Internally frequency compensated for unity gain
• Very low supply current drain (700µA) - Essentially independent of supply voltage
• Input common-mode voltage range includes ground
• Differential input voltage range equal to the power supply voltage
• Eliminates need for dual supplies
• Allows direct sensing near GND and VOUT also goes to GND
• Compatible with all forms of logic
• Power drain suitable for battery operation
• In the linear mode the input common-mode, voltage range includes ground and the output voltage
• Can swing to ground, even though operated from only a single power supply voltage
• Unity gain cross frequency is temperature compensated
• Input bias current is also temperature compensated
• 100dB Large DC voltage gain
• 45nA Low input biasing current (temperature compensated)
• 2mV Low input offset voltage
• 5nA Offset current

Tillämpningar

Industrial, Consumer Electronics, Portable Devices, Sensing & Instrumentation, Motor Drive & Control, Test & Measurement

Varningar

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Kommentarer

Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.