IRFB4229PBF
Power MOSFET, N Channel, 250 V, 46 A, 0.046 ohm, TO-220AB, Through Hole
Behöver du fler?
| Antal | |
|---|---|
| 1+ | 33,600 kr |
| 10+ | 30,340 kr |
| 100+ | 16,090 kr |
| 500+ | 13,050 kr |
| 1000+ | 12,940 kr |
Produktinformation
Produktöversikt
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Tillämpningar
Audio, Consumer Electronics, Power Management
Varningar
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniska specifikationer
N Channel
46A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
250V
0.046ohm
Through Hole
5V
3Pins
-
-
Teknisk dokumentation (3)
Lagstiftning och miljö
Det land där den sista betydelsefulla tillverkningsprocessen utfördesUrsprungsland:China
Det land där den sista betydelsefulla tillverkningsprocessen utfördes
RoHS
RoHS
Certifikat för produktefterlevnad