HMC385LP4E

HMC385LP4E is a GaAs InGaP heterojunction bipolar transistor (HBT) MMIC VCO with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifier. Covering 2.25 to 2.5GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.5dBm typical from a single supply of 3V at 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package. This low noise MMIC VCO w/buffer amplifier is used in wireless infrastructure, industrial controls, test equipment, military.

• No external resonator needed
• Frequency range from 2.25 to 2.5GHz (TA = +25° C, Vcc = +3V)
• Power output is 4.5dBm (typ, TA = +25°C, Vcc = +3V)
• SSB phase noise at 100KHz offset, Vtune= +5V at RFOUT is -115dBc/Hz (typ, TA = +25°C, Vcc = +3V)
• Tune voltage range from 0 to 10V (Vtune, TA = +25°C, Vcc = +3V)
• Supply current (Icc) (Vcc = +3V) is 35mA (typ, TA = +25°C, Vcc = +3V)
• Tune port leakage current (Vtune= 13V) is 10µA (max, TA = +25°C, Vcc = +3V)
• Output return loss is 9dB (typ, TA = +25°C, Vcc = +3V)
• Frequency drift rate is 0.25MHz/°C (typ, TA = +25°C, Vcc = +3V)
• QFN package, operating temperature range from -40°C to +85°C

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