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INFINEON  IRF7779L2TR1PBF  MOSFET transistor, N Kanal, 11 A, 150 V, 9 mohm, 10 V, 4 V

INFINEON IRF7779L2TR1PBF
Technical Data Sheet (261.02KB) EN Se alla tekniska dokument

Bilden är enbart avsedd som illustration. Se produktbeskrivningen.

Produktöversikt

The IRF7779L2TR1PBF is a DirectFET™ N-channel Power MOSFET ideal for high performance isolated converter and primary switch socket. It combines the latest HEXFET® power MOSFET silicon technology with the advanced DirectFET™ packaging to achieve the lowest ON-state resistance in a package. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infrared or convection soldering techniques. It allows dual sided cooling to maximize thermal transfer in power systems. It is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements and makes this device ideal for high performance power converters.
  • Low conduction losses
  • High CdV/dt immunity
  • Dual-sided cooling compatible
  • Compatible with existing surface-mount techniques

Produktinformation

Transistorpolaritet:
N Kanal
Kontinuerlig Urladdningsström (Id):
11A
Spänning Vds (drain-source):
150V
Motstånd Rds(on), Påslaget läge:
0.009ohm
Rds(på) testspänning Vgs:
10V
Tröskelspänning Vgs:
4V
Effektförlust Pd:
125W
Transistorkapsel utförande:
DirectFET L8
Antal stift (pins):
5Stift
Drifttemperatur Max:
175°C
Produktsortiment:
-
Kvalificeringsstandarder för fordon:
-
SVHC-ämne:
No SVHC (17-Dec-2015)
MSL livslängd:
MSL 1 - Obegränsad

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Tillämpningar

  • Kraftsystem Management

Lagstiftning och miljö

Ursprungsland:
Mexico

Det land där den sista betydelsefulla tillverkningsprocessen utfördes

RoHS-kompatibelt:
Ja
Tariffnr:
85412900
Vikt (kg):
.001